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RF Device Data
Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
TYPICAL CHARACTERISTICS
— 2110--2170 MHz
2210
16
40
2050
-- 4 0
-- 5
IRL
Gps
IMD
f, FREQUENCY (MHz)
VDD
=28Vdc,Pout
= 10 W (PEP)
IDQ
= 130 mA, 100 kHz Tone Spacing
36
-- 1 0
32
-- 1 5
28
24
-- 2 0
-- 2 5
20
-- 3 0
2130 2170
Figure 4. Two--Tone Wideband Performance
@Pout
= 10 Watts (PEP)
Pout, OUTPUT POWER (WATTS) PEP
11
18
1
IDQ
= 195 mA
VDD
= 28 Vdc, f = 2170 MHz
Two--Tone Measurements
100 kHz Tone Spacing
17
14
12
10 30
Figure 5. Two--Tone Power Gain versus
Output Power
30
-- 6 0
-- 1 0
0.1 1 10
-- 2 0
-- 3 0
-- 4 0
-- 5 0
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation
Distortion versus Output Power
G
ps
, POWER GAIN (dB)
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATIO
N DISTORTION (dBc)
13010
0.1
1 100
-- 7 0
-- 1 0
0.1
7th Order
VDD
=28Vdc,IDQ
= 130 mA
f1 = 2170 MHz, f2 = 2170.1 MHz
Two--Tone Measurements
5th Order
3rd Order
-- 2 0
-- 3 0
-- 4 0
Figure 7. Intermodulation Distortion Products
versus Output Power
IMD, INTERMODULATIO
N DISTORTION (dBc)
2090
15
65 mA
130 mA
-- 5 0
-- 3 5
0.1
?
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
?D
16
13
97.5 mA
162.5 mA
INTERMODULATION D
ISTORTION (dBc)
IMD, THIRD ORDER
130 mA
97.5 mA
195 mA
10
-- 7 0
-- 2 0
7th Order
TWO--TONE SPACING (MHz)
VDD
=28Vdc,Pout
= 10 W (PEP)
IDQ
= 130 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 2170 MHz
5th Order
3rd Order
-- 3 0
-- 4 0
-- 5 0
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
IMD, INTERMODULATIO
N DISTORTION (dBc)
-- 6 0
Pout, OUTPUT POWER (WATTS) PEP
-- 6 0
VDD
= 28 Vdc, f = 2170 MHz
Two--Tone Measurements
100 kHz Tone Spacing
162.5 mA
IDQ
=65mA
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